Chemical vapor deposition of Ni films from bis-(ethylcyclopentadienyl) nickel

Here we report preliminary results from an attempt to use bis-(ethylcyclopentadienyl) nickel [(EtCp)2Ni] as a precursor for MOCVD of Ni thin films in the (EtCp)2Ni-Ar and (EtCp)2Ni-H2-Ar reaction systems. Deposited films were analyzed by means of atomic force microscope (AFM), scanning electron microscopy (SEM), X-ray fluorescence spectroscopy (XFS).The effect of hydrogen on growth rate, composition, and morphology of the deposited Ni films were experimentally studied.