A spiking neural network in 180 nm CMOS

Circuits and Systems for Receiving, Transmitting and Signal Processing
Authors:
Abstract:

A hardware implementation of a spiking neural network for classifying font images of letters and numbers has been developed in the 180 nm CMOS technology of Mikron JSC. The layout dimensions are 500×550 µm. The supply voltage is 1.0 V. The average power consumption is approximately 0.06 mW. The clock frequency is up to 10 MHz. The neural network contains four layers of 15, 8, 8, and 10 nodes, respectively. The input data and synapse weights have a bit width of 3 bits. A comparison with the results from other studies is performed.

Funding:

The integrated circuit was manufactured using funds from the Ministry of Science and Higher Education of the Russian Federation within the framework of the federal project “Training of personnel and scientific foundation for the electronics industry” under the state assignment “Development of a prototyping methodology for electronic component base using domestic microelectronic manufacturing facilities based on MPW service”.

  • References

    1. Asghar M.S., Arslan S., Kim H.W. Low Power Spiking Neural Network Circuit with Compact Synapse and Neuron Cells. 2020 International SoC Design Conference (ISOCC), 2020, Pp. 157–158. DOI: 10.1109/ISOCC50952.2020.9333105

    2. Asghar M.S., Arslan S., Kim H.W. A Low-Power Spiking Neural Network Chip Based on a Compact LIF Neuron and Binary Exponential Charge Injector Synapse Circuits. Sensors, 2021, Vol. 21, No. 13, Art. no. 4462. DOI: 10.3390/s21134462

    3. Skrebenkov D.I., Budanov D.O. Hardware Implementation of Neural Networks. 2024 International Conference on Electrical Engineering and Photonics (EExPolytech), 2024, Pp. 99–102. DOI: 10.1109/EEx-Polytech62224.2024.10755531

    4. Skrebenkov D.I., Budanov D.O. Methods for Reducing Power Consumption in Hardware Implemen-ted Neural Networks. 2025 International Conference on Electrical Engineering and Photonics (EExPolytech), 2025, Pp. 1–4. DOI: 10.1109/EExPolytech66949.2025.11252131

    5. Mavrin I.A., Ryndin E.A., Andreeva N.V. Razrabotka analogovoi impul'snoi neironnoi seti [Development of an analog pulse neural network]. XI Nauchno-prakticheskaia konferentsiia s mezhdunarodnym uchastiem “Nauka nastoiashchego i budushchego” dlia studentov, aspirantov i molodykh uchenykh [XI Scientific and Practical Conference with International Participation “Science of the Present and Future” for students, postgra-duates and young scientists], 2023, Vol. 1, Pp. 114–118.

    6. Udovichenko V., Krokhmanskii V., Ryndin E.A. Topologiia iskusstvennogo sinapsa dlia avtomatizirovannogo proektirovaniia neironnykh setei [Artificial synapse topology for automated design of neural networks], Available: https://events.priem.etu.ru/api/open/nnb/stand-file?id=85844 (Accessed 24.06.2026)

    7. Ryndin E.A., Andreeva N.V. Integral electronic CMOS synapse. Russian Federation Patent, No. RU 2808951 C1 (2023).

    8. Ryndin E.A., Andreeva N.V. Integrated electronic synaptic CMOS element. Russian Federation Patent, No. RU 2836650 C1 (2024).

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Previous articleNext article