A frequency-selective circuit in 180 nm CMOS

Circuits and Systems for Receiving, Transmitting and Signal Processing
Authors:
Pilipko M.M.Morozov D.V.
Abstract:

A frequency-selective device has been developed in the form of a rejector active filter based on transconductance amplifiers and capacitors in the 180 nm CMOS technology of Mikron JSC. The layout dimensions are 62×26 µm. Post-layout simulation results are as follows: rejection frequency is 312.5 MHz; passband gain is 1.44 dB; rejection is 23.1 dB; power consumption is 4.8 mW; total harmonic distortion is 0.07%. A comparison with the results from other studies is performed. The device can be applied in optical communication systems.

Funding:

The integrated circuit was manufactured using funds from the Ministry of Science and Higher Education of the Russian Federation within the framework of the federal project “Training of personnel and scientific foundation for the electronics industry” under the state assignment “Development of a prototyping methodology for electronic component base using domestic microelectronic manufacturing facilities based on MPW service”.

Key words:
CMOSfrequency-selective devicerejectoractive filtertransconductance amplifierelement imitation
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