Microelectronic class e power amplifier design procedure with allowance for parasitic element parameters

Electronics, Antennas, RF-circuits
Authors:
Rumyancev Ivan A. Alexander S. Korotkov
Abstract:

This paper proposes microelectronic class E power amplifier design procedure with allowance for parasitic element parameters. Peculiarity of microelectronic power amplifiers for 3G communication systems mobile stations is considered.