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<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "https://jats.nlm.nih.gov/publishing/1.3/JATS-journalpublishing1-3.dtd">
<article article-type="brief-report" dtd-version="1.3" xml:lang="ru">
  <front>
    <journal-meta>
      <journal-title-group>
        <journal-title>Computing, Telecommunication and Control</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Информатика, телекоммуникации и управление</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2687-0517</issn>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="publisher-id">4</article-id>
      <article-id pub-id-type="doi">10.18721/JCSTCS.19204</article-id>
      <title-group>
        <article-title>A frequency-selective circuit in 180 nm CMOS</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Частотно-избирательное устройство по технологии КМОП 180 нм</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Pilipko</surname>
            <given-names>M.M.</given-names>
          </name>
          <email>m_m_pilipko@rambler.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Morozov</surname>
            <given-names>Dmitriy</given-names>
          </name>
          <email>dvmorozov@inbox.ru</email>
        </contrib>
      </contrib-group>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2026-06-30">
        <day>30</day>
        <month>06</month>
        <year>2026</year>
      </pub-date>
      <volume>19</volume>
      <issue>2</issue>
      <fpage>44</fpage>
      <lpage>51</lpage>
      <abstract xml:lang="en">
        <p>A frequency-selective device has been developed in the form of a rejector active filter based on transconductance amplifiers and capacitors in the 180 nm CMOS technology of Mikron JSC. The layout dimensions are 62 x 26 µm. Post-layout simulation results are as follows: rejection frequency is 312.5 MHz; passband gain is 1.44 dB; rejection is 23.1 dB; power consumption is 4.8 mW; total harmonic distortion is 0.07%. A comparison with the results from other studies is performed. The device can be applied in optical communication systems.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>CMOS</kwd>
        <kwd>frequency-selective device</kwd>
        <kwd>rejector</kwd>
        <kwd>active filter</kwd>
        <kwd>transconductance amplifier</kwd>
        <kwd>element imitation</kwd>
      </kwd-group>
    </article-meta>
  </front>
  <back>
    <ref-list>
      <title>References</title>
      <ref id="ref1">
        <mixed-citation publication-type="journal">Pérez-Bailón J., Calvo B., Medrano N., Ramírez-Angulo J. A 1.8 V Gm-C Highly Tunable Low Pass Filter for Sensing Applications. 2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), 2020, Pp. 1–5. DOI: 10.1109/I2MTC43012.2020.9128692</mixed-citation>
      </ref>
      <ref id="ref2">
        <mixed-citation publication-type="journal">Ghasemi A.R., Aminzadeh H., Ballo A. Ladder-Type Gm-C Filters with Improved Linearity. IEEE Access, 2023, Vol. 11, Pp. 41503–41513. DOI: 10.1109/ACCESS.2023.3270372</mixed-citation>
      </ref>
      <ref id="ref3">
        <mixed-citation publication-type="journal">Wang J.-f., Liu X.-f., Ju S.-r., Wang T., Qian J. Design of a low-pass filter for wideband transceiver. 2023 8th International Conference on Integrated Circuits and Microsystems (ICICM), 2023, Pp. 397–400. DOI: 10.1109/ICICM59499.2023.10366038</mixed-citation>
      </ref>
      <ref id="ref4">
        <mixed-citation publication-type="journal">Corbacho I., Carrillo J.M., Ausín J.L., Domínguez M.Á., Peréz-Aloe R., Duque-Carrillo J.F. A 4-Decade-Tunable High-Selectivity Gm-C Bandpass Filter for Simultaneous Multi-Sine Bioimpedance Analysis. IEEE Transactions on Circuits and Systems – I: Regular Papers, 2024, Vol. 71, No. 1, Pp. 160–173. DOI: 10.1109/TCSI.2023.3331979</mixed-citation>
      </ref>
      <ref id="ref5">
        <mixed-citation publication-type="journal">Corbacho I., Carrillo J.M., Ausín J.L., Domínguez M.Á., Duque-Carrillo J.F. 0.8-V CMOS Gm-C Bandpass Filter for Electrical Bioimpedance Spectroscopy. 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 2021, Pp. 1–4. DOI: 10.1109/ICECS53924.2021.9665648</mixed-citation>
      </ref>
      <ref id="ref6">
        <mixed-citation publication-type="journal">Corbacho I., Carrillo J.M., Ausín J.L., Domínguez M.A., Pérez-Aloe R., Duque-Carrillo J.F. Impact of Process Variations on the Performance of a Widely Tunable CMOS Transconductor. 2022 18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2022, Pp. 1–4. DOI: 10.1109/SMACD55068.2022.9816190</mixed-citation>
      </ref>
      <ref id="ref7">
        <mixed-citation publication-type="journal">Corbacho I., Carrillo J.M., Ausín J.L., Domínguez M.Á., Pérez-Aloe R., Duque-Carrillo J.F. Low-Gm CMOS Transconductors with Wide Tuning Range for Bioimpedance Spectroscopy. 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2023, Pp. 1–4. DOI: 10.1109/SMACD58065.2023.10192142</mixed-citation>
      </ref>
      <ref id="ref8">
        <mixed-citation publication-type="journal">Morozov D.V., Korotkov A.S. A realization of low-distortion CMOS transconductance amplifier. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 2001, Vol. 48, No. 9, Pp. 1138–1141. DOI: 10.1109/81.948443</mixed-citation>
      </ref>
    </ref-list>
  </back>
</article>
