An atomic layer deposition technique provides key advantages for developing more efficient materials with optimized dielectric properties (high-k dielectrics) for various semiconductor device applications (for example, transistors and memory cells). Highly conformal atomic layer deposition of dielectric layers on 200 and 300 mm silicon wafers, especially HfO2, has no alternative in sight for the next generations of microelectronics. Thus, we have examined the growth behavior of Hafnium-based materials and focused on the impact of precursor chemistry and process conditions on the bulk growth behavior and the ALD growth characteristics of ternary oxides. Two different ALD reactor design types and two wafer diameters results were compared. The results of measuring the dielectric properties and a microstructure analysis have been shown and discussed.